2SC3842 データシートの表示（PDF） - Inchange Semiconductor

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2SC3842

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A

VBEsat Base-emitter saturation voltage

IC=5A ;IB=1A

ICBO

Collector cut-off current

VCB=500V ;IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=5A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=10V

COB

Output capacitance

IE=0 ; VCB=10V ;f=1MHz

Product Specification

2SC3842

MIN TYP. MAX UNIT

400

V

600

V

6

V

1.0

V

1.5

V

100 μA

100 μA

10

40

32

MHz

100

pF

2

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