CG2H40010 データシートの表示（PDF） - Cree, Inc

部品番号

コンポーネント説明

メーカー

CG2H40010

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree, Inc 

Typical Noise Performance

Figure 5. - Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CG2H40010F

Simulated Minimum NoiseVVFDdDigd=u=r2e288aVVn,,dIIdDNQqo==is11e00R00emmsAisAtance of the CG2H40010F

2.0

40

NF

1.8

36

RN

1.6

32

1.4

28

1.2

24

1.0

20

0.8

16

0.6

12

0.4

8

0.2

4

0.0

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

Frequency (GHz)

Electrostatic Discharge (ESD) Classifications

Parameter

Human Body Model

Charge Device Model

Symbol

HBM

CDM

Class

1A > 250 V

1 < 200 V

Test Methodology

JEDEC JESD22 A114-D

JEDEC JESD22 C101-C

Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are

registered trademarks of Cree, Inc.

5

CG2H40010 Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

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