CG2H40010 データシートの表示（PDF） - Cree, Inc

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CG2H40010

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree, Inc 

Source and Load Impedances

Z Source

G

D

Z Load

S

Frequency (MHz)

0.50

1.00

1.50

2.00

2.50

3.00

3.50

4.00

4.50

5.00

5.50

6.00

Z Source

55.3 + j27.6

30.9 + j17.8

20.4 + j5.17

16.7 + j0.60

9.7 - j4.6

6.6 - j7.75

5.1 - j11.5

6.21 - j14.1

4.89 - j19.8

5.22 - j25.9

5.77 - j30.8

8.04 - j37.2

Z Load

40.9 + j2.34

26 + j7.7

27 + j6.5

18.3 + j5.94

11.5 + j10.9

20.6 + j8.75

15.2 + j3.43

11.6 - j4.77

8.58 - j5.11

10.8 - j6.23

9.06 - j13.3

10.2 - j15.3

Note 1. VDD = 28V, IDQ = 100mA in the 440166 package.

Note 2. Optimized for power, gain, PSAT and PAE.

Note 3. When using this device at low frequency, series resistors should be

used to maintain amplifier stability.

CG2H40010 Power Dissipation De-rating Curve

CGH40010F CW Power Dissipation De-rating Curve

16

14

12

10

8

Note 1

6

4

2

0

Note 1. Area 0excee25ds M5a0 xim7u5m C1a00se O1p25erat1i5n0 g Te17m5 per2a00ture22(5See2P50age 2).

Maximum Case Temperature (°C)

Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are

registered trademarks of Cree, Inc.

6

CG2H40010 Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

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