CG2H40010 データシートの表示（PDF） - Cree, Inc

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CG2H40010

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree, Inc 

CG2H40010-AMP Demonstration Amplifier Circuit Bill of Materials

Designator

Description

Qty

R1,R2

RES,1/16W,0603,1%,0 OHMS

1

R3

RES,1/16W,0603,1%,47 OHMS

1

R4

RES,1/16W,0603,1%,100 OHMS

1

C6

CAP, 470PF, 5%,100V, 0603

1

C17

CAP, 33 UF, 20%, G CASE

1

C16

CAP, 1.0UF, 100V, 10%, X7R, 1210

1

C8

CAP 10UF 16V TANTALUM

1

C14

CAP, 100.0pF, +/-5%, 0603

1

C1

CAP, 0.5pF, +/-0.05pF, 0603

1

C2

CAP, 0.7pF, +/-0.1pF, 0603

1

C10,C11

CAP, 1.0pF, +/-0.1pF, 0603

2

C4,C12

CAP, 10.0pF,+/-5%, 0603

2

C5,C13

CAP, 39pF, +/-5%, 0603

2

C7,C15

CAP,33000PF, 0805,100V, X7R

2

J3,J4

CONN SMA STR PANEL JACK RECP

1

J2

HEADER RT>PLZ.1CEN LK 2 POS

1

J1

HEADER RT>PLZ .1CEN LK 5POS

1

-

PCB, RO4350B, Er = 3.48, h = 20 mil

1

Q1

CG2H40010F or CG2H40010P

1

CG2H40010-AMP Demonstration Amplifier Circuit

Copyright © 2017-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are

registered trademarks of Cree, Inc.

7

CG2H40010 Rev 1.1

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

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