MTB52N06VL データシートの表示（PDF） - ON Semiconductor
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MTB52N06VL Datasheet PDF : 10 Pages
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MTB52N06VL
TYPICAL ELECTRICAL CHARACTERISTICS
110
100
VGS = 10 V
6V
8V
90 7 V
80
TJ = 25°C
5V
70
60
50
4V
40
30
20
3V
10
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
110
100 VDS ≥ 10 V
90
80
TJ = − 55°C
100°C
70
25°C
60
50
40
30
20
10
0
0.5 1.0 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
.070
VGS = 5 V
.060
.050
.040
TJ = 100°C
.030
25°C
.020
− 55°C
.010
0
0 10 20 30 40 50 60 70 80 90 100 110
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
.040
TJ = 25°C
.035
.030
VGS = 5 V
.025
.020
10 V
.015
.010
.005
0
0 10 20 30 40 50 60 70 80 90 100 110
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.8
VGS = 5 V
1.6 ID = 26 A
1.4
1.2
1
0.8
0.6
1000
VGS = 0 V
100
10
TJ = 125°C
100°C
0.4
0.2
0
1
− 50 − 25 0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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