Q67100-Q1074 データシートの表示（PDF） - Infineon Technologies

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Q67100-Q1074

1M x 16-Bit Dynamic RAM (1k-Refresh)

Infineon Technologies 

HYB 5118160BSJ-50/-60/-70

1M x 16-DRAM

DC Characteristics (cont’d)

TA = 0 to 70 °C, VSS = 0 V, VCC = 5 V ± 10 %, tT = 5 ns

Parameter

Symbol

Limit Values

min.

max.

Average VCC supply current,

ICC4

during fast page mode: -50 ns version

–

55

-60 ns version

–

50

-70 ns version

–

45

(RAS = VIL, CAS, address cycling, tPC = tPC min.)

Standby VCC supply current

(RAS = CAS = VCC – 0.2 V)

ICC5

–

1

Average VCC supply current, during CAS-

ICC6

before-RAS refresh mode: -50 ns version

–

200

-60 ns version

–

180

-70 ns version

–

160

(RAS, CAS cycling, tRC = tRC min.)

Average Self Refresh Current

ICC7

_

1

(CBR cycle with tRAS>TRASSmin., CAS held low,

WE=Vcc-0.2V, Address and Din=Vcc--0.2V or 0.2V)

Unit Test

Condition

mA 2) 3) 4)

mA 2) 3) 4)

mA 2) 3) 4)

mA 1)

mA 2) 4)

mA 2) 4)

mA 2) 4)

mA

Capacitance

TA = 0 to 70 °C,VCC = 5 V ± 10 %, f = 1 MHz

Parameter

Symbol

Input capacitance (A0 to A9)

CI1

Input capacitance (RAS, UCAS, LCAS, WE, OE) CI2

I/O capacitance (I/O1-I/O16)

CIO

Limit Values

min.

max.

–

5

–

7

–

7

Unit

pF

pF

pF

Semiconductor Group

6

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