TPD1009S
q High-Side Power Switch for Motor, Solenoid and Lamp Drive Applications
TPD1009S is a monolithic power IC for high-side switches. The IC has a vertical MOSFET output which
can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device offers intelligent
self-protection and diagnostic functions.
Features
Timing Chart
q A monolithic power IC with a new
structure combining a control
Input Signal
block (Bi-CMOS) and a vertical
power MOSFET (π-MOS) on a
single chip.
Overtemperature
q One side of load can be
grounded to a high-side switch.
q Can directly drive a power load
Overcurrent
from a micriprocessor.
q Built-in protection against thermal
shutdown and load short circuiting.
q Incorporates a diagnosis function
that allows diagnosis output to be
read externally at load short cir-
Output Signal
Diagnosis
Output
OFF
Current limit
cuiting, opening, or overtemperature.
q Up to –10 V of counterelectro-
Maximum Rating(Ta = 25°C)
motive force from an L load can
Characteristic
Symbol
Rating
Unit
be applied.
q Low ON-resistance: RON = 60 mΩ
q (max)
Drain-Source Voltage
VDS
60
V
Supply Voltage
DC
VDD (1)
25
V
Pulse
VDD (2)
60 (Rs = 1Ω, τ = 250 ms)
Low operating current: IDD = 1 mA
q (typ.) (@ VDD = 12 V, VIN = 0 V)
q 5-pin TO-220 insulated package
q Three standard lead configura-
tions
Input Voltage
DC
VIN (1)
– 0.5 to 12
V
Pulse
VIN (2)
VDD (1) + 1.5 (t = 100 ms)
Diagnosis Output Voltage
VDIAG
– 0.5 to 25
V
Output Current
IO
Internally limited
A
Input Current
IIN
±10
mA
Diagnosis Output Current
IDIAG
5
mA
Power Dissipation Tc = 25°C
PD (1)
30
W
Ta = 25°C
PD (2)
2
TO-220NIS 5PIN
(LBS)
Operating Temperature
Junction Temperature
Storage Temperature
Topr
Tj
Tstg
– 40 to 110
°C
150
°C
– 55 to 150
°C
Lead Temperature / Time
TSOL
275 (5 s), 260 (10 s)
°C
Electrical Characteristics (Tj = –40 to 110°C, VDD = 8 to 18 V)
Characteristic
Symbol
Test Condition
Operating Supply Voltage
VDD(opr)
–
Supply Current
IDD
VDD = 12 V, VIN = 0 V
Input Voltage
VIH
VDD = 12 V, IO = 8 A
VIL
VDD = 12 V, IO = 1.2 mA
Input Current
IIN (1)
IIN (2)
VDD = 12 V, VIN = 5 V
VDD = 12 V, VIN = 0 V
On-Voltage
On-Resistance
VDS(ON)
RDS(ON)
VDD = 12 V, IO = 8 A, Tj = 25°C
Output Leakage Current
IOL
VDD = 18 V, VIN = 0 V
Diagnosis Output Voltage “L” Level VDL
VDD = 12 V, IDL = 2 mA
Diagnosis Output Current “H” Level IDH
VDD = 18 V, VDH = 18 V
Overcurrent Protection
IS (1) (Note 1)
IS (2) (Note 2)
VDD = 12 V, Tj = 25°C
Thermal
Temperature
TS
–
Shutdown Hysteresis
∆TS
–
Open Detection Resistance
Switching Time
Rops
tON
tOFF
VDD = 8 V
VDD = 12 V, RL = 5 Ω, Tj = 25°C
Note1 : IS (1) Overcurrent detection value when load is short circuited and VIN = “L” → “H”
Note2 : IS (2) Overcurrent detection value when load current is increased while VIN = “H”
Min
Typ.
Max
Unit
5
12
18
V
–
1
5
mA
3.5
–
–
V
–
–
1.5
–
50
200
µA
– 0.2
–
0.2
–
–
0.48
V
–
–
0.06
Ω
–
–
1.2
mA
–
–
0.4
V
–
–
10
µA
8
12
–
A
15
24
–
150
160
200
°C
–
10
–
1
50
100
kΩ
10
200
–
µs
10
30
–
13