MII100-12A3 データシートの表示（PDF） - IXYS CORPORATION
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MII100-12A3 Datasheet PDF : 4 Pages
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40
mJ
30
Eon
20
160
Eon
td(on)
ns
120
t
tr
80
10
0
0
VCE = 600V
VGE = ±15V 40
RG = 15W
TJ = 125°C
0
50
100
150 A
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
25
mJ
VCE = 600V
VGE = ±15V
20
Eon
IC = 75A
TJ = 125°C
15
10
td(on)
200
ns
Eon 160
t
120
tr 80
5
40
0
0
W0
8 16 24 32 40 48 56
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
200
A
160
ICM
120
80
40
RG = 15W
TJ = 125°C
VCEK < VCES
0
0 200 400 600 800 1000 1200 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
MII 100-12 A3 MID 100-12 A3
MDI 100-12 A3
20
mJ
Eoff 15
Eoff
td(off)
800
ns
600
t
10
5
0
0
400
VCE = 600V
VGE = ±15V
RG = 15W 200
TJ = 125°C
tf
0
50
100
150 A
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
25
mJ
20
Eoff
15
VCE = 600V
VGE = ±15V
IC = 75A
TJ = 125°C
10
td(off)
Eoff
2000
ns
1600
t
1200
800
5
400
0
0
8
16
24
32
40
Wtf 0
48 56
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0.1
ZthJC
0.01
diode
IGBT
0.001
0.0001
single pulse
0.00001
0.00001 0.0001 0.001 0.01
100-12
0.1 s 1
t
Fig. 12 Typ. transient thermal impedance
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4-4
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