MRF148A データシートの表示（PDF） - New Jersey Semiconductor

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MRF148A

RF Power Field-Effect Transistor

New Jersey Semiconductor 

ELECTRICAL CHARACTERISTICS (Tc = 255C unless otherwise noted.)

Characteristic

Symbol

Win

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage (VQS = 0, ID = 10 mA)

Zero Gate Voltage Drain Current (Vfjs = 50 V, VQS = 0)

Gate-Body Leakage Current (VGS = 20 V, VDS = 0)

V(BR)DSS

125

—

—

Vdc

IDSS

—

—

1.0

rnAdc

IGSS

—

—

100

nAdc

ON CHARACTERISTICS

Gate Threshold Voltage (Vps = 10 V, ID = 10 mA)

VQS(th)

1.0

2.5

5.0

Vdc

Drain-Source Orv-Voltage (VQS = 10 V, ID = 2.5 A)

Forward Transconductance (VDS = 1 0 V, ID = 2.5 A)

vDS(on)

1.0

3.0

5.0

Vdc

9fs

0.8

1.2

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance (V0S = 50 V, VGS = 0, f = 1 .0 MHz)

Output Capacitance (VDS = 50 V, VGS = 0, f = 1 .0 MHz)

C1SS

Coss

Reverse Transfer Capacitance (VQS = 50 V, VQS = 0. f = 1 .0 MHz)

Crss

FUNCTIONAL TESTS(SSB)

Common Source Amplifier Power Gain

(30 MHz)

<VDD = so v, Pout = 30 w (PEP), IDQ = 1 oo mA) (175 MHZ)

Gps

Drain Efficiency

(30 W PEP)

11

(VDD = 50 v, f = so MHZ. IDQ = 1 oo mA)

(30 w cw)

Intermodulation Distortion

(VDD = 50V.POU1 = 30W(PEP),

f = 30; 30.001 MHz. IDQ = 100 mA)

IMD(d3)

IMD(dH)

Load Mismatch

V

(VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz.

IDQ = 100 mA, VSWR 30:1 at all Phase Angles)

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

(VDD = so v, p^ = 10 w (PEP), n =30MHZ.

12=30.001 MHz. IDQ = 1.0 A)

GPS

IMD(d3)

IMO(d9-l3)

NOTE:

I To MIL-STD-1311 Version A, Test Method 2204B, Two Tone. Reference Each Tone.

—

62

—

PF

—

35

—

PF

—

3.0

—

PF

—

18

dB

15

—

—

40

%

50

—

dB

—

-35

-60

=

No Degradation in Output Power

—

20

—

dB

—

-50

—

—

-70

—

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