DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BY527 データシートの表示(PDF) - New Jersey Semiconductor

部品番号
コンポーネント説明
メーカー
BY527
NJSEMI
New Jersey Semiconductor NJSEMI
BY527 Datasheet PDF : 2 Pages
1 2
Controlled avalanche rectifier
BY527
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
IF = 1 A; TJ = Tj max; see Fig. 6
IF = 1 A; see Fig. 6
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
IR
reverse current
VR = VRWMmax; see Fig. 7
VR = VRWMmaxI Tj = 165 °C; see Fig. 7
trr
reverse recovery time when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig. 10
cd
diode capacitance VR = O V ; f = 1 MHz; see Fig. 8
MIN.
-
-
1250
-
-
TYP.
-
-
-
-
3
MAX.
0.8
1.0
UNIT
V
V
V
1 uA
150 HA
US
-
50
_
PF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length = 10 mm
note 1
VALUE
46
100
UNIT
K/W
K/W

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]