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BYW80PI-200 データシートの表示(PDF) - STMicroelectronics

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BYW80PI-200
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BYW80PI-200 Datasheet PDF : 5 Pages
1 2 3 4 5
BYW80PI-200
THERMAL RESISTANCE
Symbol
Rth (j-c)
Junction to case
Parameter
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
IR *
Tj = 25°C
VR = VRRM
VF **
Tj = 100°C
Tj = 125°C
IF = 7 A
Tj = 125°C
IF = 15 A
Tj = 25°C
IF = 15 A
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x IF(AV) + 0.027 x IF2(RMS)
Value
3.5
Unit
°C/W
Min. Typ. Max. Unit
10 µA
1 mA
0.85 V
1.05
1.15
RECOVERY CHARACTERISTICS
Symbol
trr
Tj = 25°C
tfr
Tj = 25°C
VFP
Tj = 25°C
Test Conditions
IF = 0.5A
IR = 1A
IF = 1A
VR = 30V
IF = 1A
VFR = 1.1 x VF
IF = 1A
Irr = 0.25A
dIF/dt = -50A/µs
tr = 10 ns
tr = 10 ns
Min. Typ. Max. Unit
25 ns
35
15
ns
2
V
2/5

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