TISP83121D データシートの表示（PDF） - Bourns, Inc

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TISP83121D

DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR

Bourns, Inc 

TISP83121D Unidirectional P & N-Gate Protector

Absolute Maximum Ratings

Rating

Symbol

Value

Unit

Repetitive peak off-state voltage, 0 °C to 70 °C

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

VDRM

100

V

10/1000 µs (GR-1089-CORE, open-circuit voltage wave shape 10/1000 µs)

5/310 µs (CCITT K20/21, open-circuit voltage wave shape 7 kV, 10/700 µs)

150

ITSP

A

250

8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)

500

Non-repetitive peak on-state current, 50 Hz, halfwave rectified sinewave, (see Notes 1 and 2)

100 ms

1s

900 s

ITSM

22

8

A

3

Junction temperature

TJ

-40 to +150

°C

Storage temperature range

Tstg

-65 to +150

°C

NOTES: 1. Initially the protector must be in thermal equilibrium with 0 °C < TJ < 70 °C. The surge may be repeated after the device returns to

its initial conditions. For operation at the rated current value, pins 1, 4, 5 and 8 must be connected together.

2. Above 70 °C, derate linearly to zero at 150 °C lead temperature.

Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted)

Parameter

Test Conditions

Min Typ Max Unit

ID

IDRM

Off-state current

Repetitive peak off-

state current

Vd = 70 V, IG = 0

Vd = VDRM = 100 V, IG = 0, 0 °C to 70 °C

1

µA

10

µA

IH

IR

IG1T

IG2T

VG1T

VG2T

CAK

Holding current

IT = 1 A, di/dt = -1A/ms

TJ = 0 to 70 °C

TJ = 25 °C 90

TJ = 70 °C 60

Reverse current

VR = 0.3 V

Gate G1 trigger current IT = +1 A, tp(g) = 20 µs

Gate G2 trigger current IT = +1 A, tp(g) = 20 µs

G1-K trigger voltage IT = +1 A, tp(g) = 20 µs

G2-A trigger voltage IT = +1 A, tp(g) = 20 µs

Anode-cathode off-

state capacitance

f = 1 MHz, Vd = 1 V rms, VD = 5 V, IG = 0 (see Note 3)

300

mA

1

mA

+200 mA

-180 mA

+1.8

V

-1.8

V

100

pF

NOTE 3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured

device terminals are a.c. connected to the guard terminal of the bridge.

Thermal Characteristics

Parameter

R θJA

Junction to free air thermal resistance

Test Conditions

TA = 25 °C, EIA/JESD51-3 PCB,

EIA/JESD51-2 environment, IT = ITSM(900)

Min Typ Max Unit

105 °C/W

FEBRUARY 1999 – REVISED JULY 2008

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

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