BD744 データシートの表示（PDF） - New Jersey Semiconductor
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BD744 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0
VcEisatH Collector-Emitter Saturation Voltage lc= -5A;IB= -0.5A
VcE(sat)-2 Collector-Emitter Saturation Voltage lc=-15A; IB=-5A
VsE(on)-1 Base-Emitter On Voltage
lc=-5A;VCE=-4V
VBE(on)-2 Base-Emitter On Voltage
lc=-15A;VCE=-4V
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
VCB=-50V; IE=0;TC=125'C
I CEO Collector Cutoff Current
VCE= -30V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1 DC Current Gain
IC=-1A;VCE=-4V
hpE-2
DC Current Gain
lc= -5A ; VCE= -4V
hFE-3
DC Current Gain
lc=-15A; VCE=-4V
Switching Times
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall time
lc=-5A;lBi=-lB2=-5A;
Vnc/ m~ 4 2V Rl_- 6 Q •
tp=20us,DutyCycles; 2%
BD744
MIN
MAX UNIT
-45
V
-1.0 V
-3.0 V
-1.0 V
-3.0 V
-0.1
mA
-5.0
-0.1 mA
-0.5 mA
40
20
150
5
20
ns
120
ns
600
ns
300
ns
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