BD744C データシートの表示（PDF） - Bourns, Inc

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BD744C

PNP SILICON POWER TRANSISTORS

Bourns, Inc 

BD744, BD744A, BD744B, BD744C

PNP SILICON POWER TRANSISTORS

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BD744

-45

Collector-emitter

V(BR)CEO breakdown voltage

IC = -30 mA IB = 0

BD744A

-60

(see Note 5)

BD744B

-80

BD744C

-100

VCE = -50 V VBE = 0

BD744

-0.1

VCE = -70 V VBE = 0

BD744A

-0.1

VCE = -90 V VBE = 0

BD744B

-0.1

ICBO

Collector cut-off

current

VCE = -110 V

VCE = -50 V

VBE = 0

VBE = 0

TC = 125°C

BD744C

BD744

-0.1

-5

VCE = -70 V VBE = 0

TC = 125°C

BD744A

-5

VCE = -90 V VBE = 0

TC = 125°C

BD744B

-5

VCE = -110 V VBE = 0

TC = 125°C

BD744C

-5

ICEO

Collector cut-off

current

VCE = -30 V

VCE = -60 V

IB = 0

IB = 0

BD744/744A

-0.1

BD744B/744C

-0.1

Emitter cut-off

IEBO current

VEB = -5 V IC = 0

-0.5

Forward current

hFE

transfer ratio

VCE(sat)

VBE

hfe

Collector-emitter

saturation voltage

Base-emitter

voltage

Small signal forward

current transfer ratio

VCE = -4 V

VCE = -4 V

VCE = -4 V

IB = -0.5 A

IB = -5 A

VCE = -4 V

VCE = -4 V

VCE = -10 V

IC = -1 A

IC = -5 A

IC = -15 A

IC = -5 A

IC = -15 A

IC = -5 A

IC = -15 A

IC = -1 A

(see Notes 5 and 6)

(see Notes 5 and 6)

(see Notes 5 and 6)

f = 1 kHz

40

20

150

5

-1

-3

-1

-3

25

|hfe|

Small signal forward

current transfer ratio

VCE = -10 V

IC = -1 A

f = 1 MHz

5

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

UNIT

V

mA

mA

mA

V

V

thermal characteristics

RθJC

RθJA

PARAMETER

Junction to case thermal resistance

Junction to free air thermal resistance

MIN TYP MAX UNIT

1.4 °C/W

62.5 °C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS †

td

Delay time

tr

Rise time

ts

Storage time

tf

Fall time

IC = -5 A

VBE(off) = 4.2 V

IB(on) = -0.5 A

RL = 6 Ω

IB(off) = 0.5 A

tp = 20 µs, dc ≤ 2%

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

MIN TYP MAX UNIT

20

ns

120

ns

600

ns

300

ns

PRODUCT INFORMATION

2

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

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