BD744B データシートの表示（PDF） - Bourns, Inc
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BD744B Datasheet PDF : 5 Pages
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BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS638AA
VCE = -4 V
tp = 300 µs, duty cycle < 2%
TC = 125°C
TC = 25°C
TC = -55°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-10
TCS638AB
IC
IB
= 10
tp = 300µs, duty cycle < 2%
-1·0
100
10
-0·1
-0·1
-1·0
-10
IC - Collector Current - A
Figure 1.
-100
-0·01
-0·1
TC = -55°C
TC = 25°C
TC = 125°C
-1·0
-10
-100
IC - Collector Current - A
Figure 2.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100
SAS638AA
tp = 1 ms,
d = 0.1 = 10%
tp = 10 ms,
d = 0.1 = 10%
-10
tp = 50 ms,
d = 0.1 = 10%
DC Operation
-1·0
-0·1
-0·01
-1·0
BD744
BD744A
BD744B
BD744C
-10
-100
VCE - Collector-Emitter Voltage - V
Figure 3.
-1000
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
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