VS-111CNQ045ASMPBF(2010) データシートの表示（PDF） - Vishay Semiconductors

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VS-111CNQ045ASMPBF
(Rev.:2010)

Schottky Rectifier New Generation 3 D-61 Package, 2 x 55 A

Vishay Semiconductors 

VS-111CNQ045A PbF Series

Vishay High Power Products

Schottky Rectifier

New Generation 3 D-61 Package, 2 x 55 A

VS-111CNQ045APbF

D-61-8

VS-111CNQ045ASMPbF

D-61-8-SM

Base

common

cathode

1

2

Anode Common

1

cathode

3

Anode

2

1

2

Anode Common

1

cathode

3

Anode

2

FEATURES

• 175 °C TJ operation

• Center tap module

• Very low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

• Guard ring for enhanced ruggedness and long term

reliability

• New fully transfer-mold low profile, small footprint, high

current package

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

VS-111CNQ045ASLPbF

Base

common

cathode

D-61-8-SL

1

Anode

1

3

Anode

2

PRODUCT SUMMARY

IF(AV)

VR

2 x 55 A

45 V

DESCRIPTION

The center tap Schottky rectifier module has been optimized

for very low forward voltage drop, with moderate leakage.

The proprietary barrier technology allows for reliable

operation up to 175 °C junction temperature. Typical

applications are in switching power supplies, converters,

freewheeling diodes, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

IF(AV)

VRRM

IFSM

VF

TJ

Rectangular waveform

tp = 5 μs sine

55 Apk, TJ = 125 °C (per leg)

Range

VALUES

110

45

4000

0.55

- 55 to 175

UNITS

A

V

A

V

°C

VOLTAGE RATINGS

PARAMETER

Maximum DC reverse voltage

Maximum working peak reverse voltage

SYMBOL

VR

VRWM

VS-111CNQ045APbF

45

UNITS

V

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 93158

Revision: 16-Apr-10

For technical questions, contact: diodestech@vishay.com

www.vishay.com

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