Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
6V62160E データシートの表示(PDF) - LAPIS Semiconductor Co., Ltd.
部品番号
コンポーネント説明
メーカー
6V62160E
4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
LAPIS Semiconductor Co., Ltd.
6V62160E Datasheet PDF : 33 Pages
1
2
3
4
5
6
7
8
9
10
Next
Last
FEDD56V62160E-07
MD56V62160E
DC Characteristics
Parameter
Symbol
Condition
MD56V62160
E-10
Bank
CKE Others
Min.
Max.
Output High
Voltage
V
OH
I
OH
=
2.0mA
2.4
Output Low
Voltage
V
OL
I
OL
=
2.0mA
0.4
Input Leakage
Current
I
LI
10
10
Output Leakage
Current
I
LO
10
10
I
CC1
One Bank
Active
t
CC
= Min.
CKE
V
IH
t
RC
= Min.
70
Average Power
No Burst
Supply Current
(Operating)
Both
I
CC1D
Banks
Active
t
CC
= Min.
CKE
V
IH
t
RC
= Min.
t
RRD
= Min.
115
No Burst
Power Supply
Both
Current
I
CC2
Banks
CKE
V
IH
t
CC
= Min.
30
(Standby)
Precharge
Average Power
Supply Current
Both
(Clock
I
CC3S
Banks
CKE
V
IL
t
CC
= Min.
Active
3
Suspension)
Average Power
Supply Current
I
CC3
One Bank
Active
CKE
V
IH
t
CC
= Min.
30
(Active Standby)
Power Supply
Current (Burst)
Both
I
CC4
Banks
CKE
V
IH
t
CC
= Min.
90
Active
Power Supply
Current
(Auto-Refresh)
I
CC5
One Bank
Active
CKE
V
IH
t
CC
= Min.
t
RC
= Min.
115
Average Power
Both
Supply Current
I
CC6
Banks
CKE
V
IL
t
CC
= Min.
2
(Self-Refresh)
Precharge
Average Power
Both
Supply Current
I
CC7
Banks
CKE
V
IL
t
CC
= Min.
2
(Power Down)
Precharge
Notes: 1. Measured with outputs open.
2. The address and data can be changed once or left unchanged during one cycle.
3. The address and data can be changed once or left unchanged during two cycles. DC
Unit Note
V
V
A
A
mA 1,2
mA 1,2
mA 3
mA 2
mA 3
mA 1,2
mA 2
mA
mA
5/33
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]