Q67100-Q1115 データシートの表示（PDF） - Siemens AG

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Q67100-Q1115

3.3V 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh

Siemens AG 

HYB 3116(7)400BJ/BT(L) -50/-60/-70

3.3V 4M x 4-DRAM

AC Characteristics (cont’d) 5)6)

TA = 0 to 70 ˚C, VCC = 3.3 V ± 0.3 V, tT = 5 ns

Parameter

Symbol

Limit Values

16F

Unit Note

-50

-60

-70

min. max. min. max. min. max.

Access time from CAS

precharge

tCPA

–

30 –

35 –

40 ns 7

RAS pulse width

CAS precharge to RAS Delay

tRAS

tRHPC

50 200 k 60 200 k 70 200 k ns

30 –

35 –

40 –

ns

Fast Page Mode Read-Modify-Write Cycle

Fast page mode read-write cycle tPRWC 71 –

80 –

95 –

ns

time

CAS precharge to WE

tCPWD 48 –

55 –

65 –

ns

CAS-before-RAS Refresh Cycle

CAS setup time

tCSR

10 –

10 –

10 –

ns

CAS hold time

tCHR

10 –

10 –

10 –

ns

RAS to CAS precharge time

tRPC

5

–

5

–

5

–

ns

Write to RAS precharge time

tWRP

10 –

10 –

10 –

ns

Write hold time referenced to

tWRH

10 –

10 –

10 –

ns

RAS

CAS-before-RAS Counter Test Cycle

CAS precharge time

tCPT

35 –

Test Mode

CAS hold time

Write command setup time

Write command hold time

tCHRT

tWTS

tWTH

30 –

10 –

10 –

Self Refresh Cycle

RAS pulse width

RAS precharge time

CAS hold time

tRASS

tRPS

tCHS

100 k –

95 –

– 50 –

40 –

30 –

10 –

10 –

100 k –

110 –

– 50 –

40 –

30 –

10 –

10 –

100 k –

130 –

– 50 –

ns

ns

ns

ns

ns 17

ns 17

ns 17

Semiconductor Group

10

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