MRFIC0913 データシートの表示（PDF） - Motorola => Freescale

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MRFIC0913

900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRFIC0913/D

The MRFIC Line

900 MHz GaAs Integrated

Power Amplifier

This integrated circuit is intended for GSM class IV handsets. The device is

specified for 2.8 watts output power and 48% minimum power added efficiency

under GSM signal conditions at 4.8 Volt supply voltage. To achieve this superior

performance, Motorola’s planar GaAs MESFET process is employed. The

device is packaged in the PFP–16 Power Flat Package which gives excellent

thermal performance through a solderable backside contact.

• Usable Frequency Range 800 to 1000 MHz

• Typical Output Power:

36.0 dBm @ 5.8 Volts

35.0 dBm @ 4.8 Volts

31.5 dBm @ 3.6 Volts

• 48% Minimum Power Added Efficiency

• Low Parasitic, High Thermal Dissipation Package

• Order MRFIC0913R2 for Tape and Reel Option.

R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

• Device Marking = M0913

MRFIC0913

900 MHz

GSM CELLULAR

INTEGRATED POWER AMPLIFIER

GaAs MONOLITHIC

INTEGRATED CIRCUIT

CASE 978–02

(PFP–16)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating

Supply Voltage

RF Input Power

Gate Voltage

Ambient Operating Temperature

Storage Temperature

Thermal Resistance, Junction to Case

Symbol

VD1, VD2

Pin

VSS

TA

Tstg

RθJC

Value

9

15

–6

–40 to + 85

– 65 to +150

10

Unit

Vdc

dBm

Vdc

°C

°C

°C/W

GND 9

8 N/C

VD1 10

GND 11

VG2 12

VG1 13

GND 14

RF IN 15

N/C 16

7 VD2

6 GND

5 RF OUT

4 RF OUT

3 GND

2 VSS

1 GND

Pin Connections and Functional Block Diagram

REV 1

© Motorola, Inc. 1996

MOTOROLA RF DEVICE DATA

MRFIC0913

1

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