OMY340 データシートの表示（PDF） - Omnirel Corp => IRF

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OMY340

POWER MOSFETS IN HERMETIC ISOLATED TO-257AA PACKAGE

Omnirel Corp => IRF 

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OMY340

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown

Voltage

VGS(th)

IGSSF

IGSSR

IDSS

Gate-Threshold Voltage

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

400

V VGS = 0,

ID = 250 mA

2.0

4.0 V VDS = VGS, ID = 250 mA

100 nA VGS = 20 V

-100 nA VGS = - 20 V

0.1 0.25 mA VDS = Max. Rat., VGS = 0

0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

10

A VDS 2 VDS(on), VGS = 10 V

2.5 2.9 V VGS = 10 V, ID = 5 A

RDS(on) Static Drain-Source On-State

Resistance1

0.58

VGS = 10 V, ID = 5 A

RDS(on) Static Drain-Source On-State

Resistance1

1.16

VGS = 10 V, ID = 5 A,

TC = 125 C

ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted

STATIC P/N OMY440

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown

Voltage

VGS(th)

IGSSF

IGSSR

IDSS

Gate-Threshold Voltage

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

500

V

2.0

4.0 V

100 nA

- 100 nA

0.1 0.25 mA

0.2 1.0 mA

4.5

A

3.2 3.52 V

VGS = 0,

ID = 250 mA

VDS = VGS, ID = 250 mA

VGS = 20 V

VGS = - 20 V

VDS = Max. Rat., VGS = 0

VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

VDS 2 VDS(on), VGS = 10 V

VGS = 10 V, ID = 4 A

RDS(on) Static Drain-Source On-State

Resistance1

0.88

VGS = 10 V, ID = 4 A

RDS(on) Static Drain-Source On-State

Resistance1

1.76

VGS = 10 V, ID = 4 A,

TC = 125 C

DYNAMIC

gfs

Ciss

Coss

Crss

Td(on)

tr

Td(off)

tf

Forward Transductance1

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

4.0 4.4

1150

165

70

17

12

45

30

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 5 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 175 V, ID = 5 A

ns Rg = 5 W , VDS =10V

ns

ns

DYNAMIC

gfs

Ciss

Coss

Crss

Td(on)

tr

Td(off)

tf

Forward Transductance1

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

4.0 4.8

1225

200

85

17

5

42

14

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 4 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 200 V, ID = 4 A

ns Rg = 5 W , VDS =10 V

ns (MOSFET) switching times are

essentially independent of

ns operating temperature.

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

(Body Diode)

ISM

Source Current1

(Body Diode)

VSD Diode Forward Voltage1

trr

Reverse Recovery Time

- 10 A Modified MOSPOWER

D

IS

Continuous Source Current

symbol showing

(Body Diode)

- 40 A the integral P-N G

ISM

Source Current1

Junction rectifier.

S

(Body Diode)

- 2 V TC = 25 C, IS = -10 A, VGS = 0 VSD Diode Forward Voltage1

530

ns TJ = 150 C,IF = IS,

trr

Reverse Recovery Time

dlF/ds = 100 A/ms

- 8 A Modified MOSPOWER

D

symbol showing

- 32 A the integral P-N G

-2

700

Junction rectifier.

S

V TC = 25 C, IS = -18 A, VGS = 0

ns TJ = 150 C,IF = IS,

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

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