1N4154(2007) データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
メーカー
1N4154 Datasheet PDF : 5 Pages
| |||
1N4154
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Forward voltage
IF = 30 mA
VF
Reverse current
VR = 25 V
IR
VR = 25 V, Tj = 150 °C
IR
Breakdown voltage
IR = 5 µA, tp/T = 0.01, tp = 0.3 ms V(BR)
35
Diode capacitance
VR = 0, f = 1 MHz, VHF = 50 mV
CD
Reverse recovery time
IF = IR = 10 mA, iR = 1 mA
trr
IF = 10 mA, VR = 6 V,
trr
iR = 0.1 x IR, RL = 100 Ω
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Typ.
Max
Unit
880
1000
mV
9
100
nA
100
µA
V
4
pF
4
ns
2
ns
100
Scattering Limit
10
1
0.1
0.01
0
94 9154
VR = 25 V
40
80 120 160 200
Tj - Junction Temperature (°C)
Figure 1. Reverse Current vs. Junction Temperature
3.0
2.5
f = 1 MHz
2.0
Tj = 25 °C
1.5
1.0
0.5
0
0.1
1
10
100
94 9156
VR - Reverse Voltage (V)
Figure 3. Diode Capacitance vs. Reverse Voltage
1000
100
Tj = 100 °C
10
Tj = 25 °C
1
0.1
0
94 9152
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
www.vishay.com
2
Document Number 85524
Rev. 1.8, 16-Feb-07
Share Link: 