2SC2412K データシートの表示（PDF） - Secos Corporation.
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2SC2412K Datasheet PDF : 3 Pages
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Elektronische Bauelemente
2SC2412K
NPN Silicon
General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
n Low Cob.
n Cob=2.0pF
n Compements the 2SA1037K
n RoHS Compliant Product
STRUCTURE
n Expitaxial planar type
n NPN Silicon Teansistor
A
L
3
S
Top View
B
2
1
D
G
C
J
H
K
3 Collector
Base 2
1
Emitter
SC-59
Dim Min Max
A
2.70 3.10
B
1.30 1.70
C
1.00 1.30
D
0.35 0.50
G 1.70 2.30
H
0.00 0.10
J
0.10 0.26
K
0.20 0.60
L
1.25 1.65
S
2.25 3.00
All Dimension in mm
!Absolute maximum (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
60
V
VCEO
50
V
VEBO
7
V
IC
0.15
A
PC
0.2
W
Tj
150
°C
Tstg
−55~+150
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 60
Collector-emitter breakdown voltage BVCEO 50
Emitter-base breakdown voltage
BVEBO
7
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
DC current transfer ratio
hFE
120
Collector-emitter saturation voltage VCE(sat) −
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
−
−
180
2
Max.
−
−
−
0.1
0.1
560
0.4
−
3.5
Unit
V
V
V
µA
µA
−
V
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=60V
VEB=7V
VCE=6V, IC=1mA
IC/IB=50mA/5mA
VCE=12V, IE=−2mA, f=100MHz
VCE=12V, IE=0A, f=1MHz
hFE values are classified as follows :
Item
Q
R
hFE
120~270 180~390
Ma rking
BQ
BR
S
270~560
BS
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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