BUP 305 D
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 6 A
20
V
VGE 16
14
400 V
800 V
12
10
8
6
4
2
0
0
10 20 30 40 50 nC 65
QGate
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
Short circuit safe operating area
ICsc = f (VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH
10
Reverse biased safe operating area
ICpuls = f (VCE) , Tj = 150°C
parameter: VGE = 15 V
2.5
ICsc/IC(90°C)
6
ICpuls/IC
1.5
4
1.0
2
0
0 200 400 600 800 1000 1200 V 1600
Semiconductor Group
6
0.5
0.0
0 200 400 600 800 1000 1200 V 1600
Dec-02-1996