BUP410D データシートの表示（PDF） - Siemens AG

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BUP410D

IGBT With Antiparallel Diode

Siemens AG 

BUP 410D

AC Characteristics

Transconductance

VCE = 20 V, IC = 6 A

Input capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Output capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Reverse transfer capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

gfs

2

Ciss

-

Coss

-

Crss

-

S

-

-

pF

320

430

40

60

25

40

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

td(on)

VCC = 300 V, VGE = 15 V, IC = 6 A

RGon = 100 Ω

-

20

Rise time

tr

VCC = 300 V, VGE = 15 V, IC = 6 A

RGon = 100 Ω

-

60

Turn-off delay time

td(off)

VCC = 300 V, VGE = -15 V, IC = 6 A

RGoff = 100 Ω

-

175

Fall time

tf

VCC = 300 V, VGE = -15 V, IC = 6 A

RGoff = 100 Ω

-

160

ns

35

90

240

220

Semiconductor Group

3

Dec-12-1996

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