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BFG505W データシートの表示(PDF) - Philips Electronics
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BFG505W
NPN 9 GHz wideband transistors
Philips Electronics
BFG505W Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG505W; BFG505W/X
handbook, full pagewidth
pot. unst.
region
135
°
0.5
stability
circle
0.2
0.2
0.5
180
°
0
0.2
90
°
1
2
45
°
5
Fmin = 1. 2 dB
F = 1.5 dB
Γ
OPT
1
2
5
F = 2 dB
F = 3 dB
5
1.0
0.8
0.6
0.4
0.2
0
°
0
0.5
−
135
°
f = 900 MHz; V
CE
= 6 V; I
C
= 1.25 mA; Z
o
= 50
Ω.
1
−
90
°
2
−
45
°
MRA652
1.0
Fig.14 Common emitter noise figure circles; typical values.
handbook, full pagewidth
pot. unst.
90
°
region
1
135
°
0.5
2
45
°
stability
circle
180
°
0.2
0.2
0
0.2
Γ
OPT
Fmin = 1. 9 dB
5
F = 2.5 dB
0.5
1
2
5
F = 3 dB
F = 4 dB
5
1.0
0.8
0.6
0.4
0.2
0
°
0
0.5
−
135
°
f = 2 GHz; V
CE
= 6 V; I
C
= 1.25 mA; Z
o
= 50
Ω.
1
−
90
°
2
−
45
°
MRA653
1.0
Fig.15 Common emitter noise figure circles; typical values.
1998 Oct 02
8
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