A770 データシートの表示（PDF） - New Jersey Semiconductor

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A770

Silicon PNP Power Transistor

New Jersey Semiconductor 

, Una.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SA770

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

:V(BR)cEo= -60(V)(Min.)

• Complement to Type 2SC1985

APPLICATIONS

• Designed for audio and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25-Q

SYMBOL

PARAMETER

VALUE UNIT

VGBO Collector-Base Voltage

-60

V

VCEO Collector-Emitter Voltage

-60

V

VEBO Emitter-Base Voltage

-6

V

Ic

Collector Current-Continuous

-6

A

IB

Base Collector Current-Continuous

Total Power Dissipation

PC

@ Tc=25°C

Tj

Junction Temperature

-3

A

40

W

150

°C

Tstg

Storage Temperature Range

-55-150 'C

PIN 1. BASE

1, COLLECTOR

3. EMITTER

TO-220C package

•« B H

yy f •*i V ^ Ix-

MQ

Ui

-» *S

-• A " ^

pr. | __L

*H

r

K

f

yi

••h* J

H «h-

* Rh

1

C

1i

i

mm

DIIV1 WIN

A 15.50

B 9.00

C 4.20

D 0.70

F 3.40

G 4.98

H 2.68

J 0.44

K 13.00

L 1.20

Q 2.70

R 2.30

S 1.29

U 6.45

U 8.66

MAX

15.90

10.20

4.50

0.90

3.70

5.18

2.90

0.60

13.40

1.45

2.90

2.70

1.35

6.65

8.86

N.I Semi-Conductors reserves the right to changetest conditions, parameter limits and packagedimensions \vithout

notice. Information furnished by N.I Semi-Conductorsis believed to be both accurate and reliable at the time of going

to press. I louever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discoveredin its use."

NJ Senii-Conduetors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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