A770 データシートの表示（PDF） - New Jersey Semiconductor
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A770 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -25mA; IB= 0
VcE(sal) Collector-Emitter Saturation Voltage lc= -3A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; lc= 0
hFE
DC Current Gain
lc=-1A;VCE=-4V
fi
Current-Gain—Bandwidth Product
IE=0.5A;VCE=-12V
Switching Times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
lc=-3A,RL=3fl,
|B1= -|B2= -0.4A,VCc= -9V
2SA770
MIN TYP. MAX UNIT
-60
V
-1.0
V
-1.0 mA
-1.0 mA
40
10
MHz
0.9
us
1.0
Ms
0.1
us
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