MMBT2222A(2004) データシートの表示（PDF） - Fairchild Semiconductor
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MMBT2222A Datasheet PDF : 8 Pages
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Electrical Characteristics Ta=25°C unless otherwise noted (Continued)
Symbol
Parameter
Small Signal Characteristics
fT
Cobo
Cibo
rb’Cc
NF
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Collector Base Time Constant
Noise Figure
Re(hie)
Real Part of Common-Emitter
High Frequency Input Impedance
Switching Characteristics
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
Test Condition
Min.
IC = 20mA, VCE = 20V, f = 100MHz 300
VCB = 10V, IE = 0, f = 1MHz
VEB = 0.5V, IC = 0, f = 1MHz
IC = 20mA, VCB = 20V, f = 31.8MHz
IC = 100µA, VCE = 10V,
RS = 1.0KΩ, f = 1.0KHz
IC = 20mA, VCE = 20V, f = 300MHz
VCC = 30V, VEB(off) = 0.5V,
IC = 150mA, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Max. Units
MHz
8.0
pF
25
pF
150 pS
4.0
dB
60
Ω
10
ns
25
ns
225
ns
60
ns
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PN2222A
Max.
*MMBT2222A
PD
Total Device Dissipation
Derate above 25°C
625
350
5.0
2.8
RθJC
Thermal Resistance, Junction to Case
83.3
RθJA
Thermal Resistance, Junction to Ambient
200
357
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2.
**PZT2222A
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
Spice Model
NPN (Is = 14.34f Xti = 3 Eg = 1.11 Vaf = 74.03 Bf = 255.9 Ne = 1.307 Ise = 14.34 Ikf = .2847 Xtb = 1.5 Br = 6.092 Isc = 0
Ikr = 0 Rc = 1 Cjc = 7.306p Mjc = .3416 Vjc = .75 Fc = .5 Cje = 22.01p Mje = .377 Vje = .75 Tr = 46.91n Tf = 411.1p Itf = .6
Vtf = 1.7 Xtf = 3 Rb = 10)
©2004 Fairchild Semiconductor Corporation
Rev. A1, August 2004
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