MMBT2222A データシートの表示（PDF） - Fairchild Semiconductor

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MMBT2222A

NPN General Purpose Amplifier

Fairchild Semiconductor 

NPN General Purpose Amplifier

(continued)

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

PD

Total Device Dissipation

Derate above 25°C

RθJC

Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction to Ambient

Max

PN2222A

625

5.0

83.3

*PZT2222A

1,000

8.0

200

125

Units

mW

mW /°C

°C/W

°C/W

Symbol

Characteristic

Max

PD

Total Device Dissipation

Derate above 25°C

RθJA

Thermal Resistance, Junction to Ambient

Effective 4 Die

Each Die

**MMBT2222A

350

2.8

357

MMPQ2222

1,000

8.0

125

240

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Units

mW

mW /°C

°C/W

°C/W

°C/W

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

500

400

VCE = 5V

125 °C

300

200

25 °C

100

- 40 °C

0

0.1 0.3

1

3

10 30 100 300

IC - COLLECTOR CURRENT (mA)

Base-Emitter Saturation

Voltage vs Collector Current

1 β = 10

0.8

- 40 °C

25 °C

0.6

125 °C

0.4

1

10

100

500

I C - COLLECTOR CURRENT (mA)

Collector-Emitter Saturation

Voltage vs Collector Current

0.4

β = 10

0.3

0.2

0.1

1

125 °C

25 °C

- 40 °C

10

100

500

I C - COLLECTOR CURRENT (mA)

Base-Emitter ON Voltage vs

Collector Current

1

VCE = 5V

0.8

- 40 °C

0.6

25 °C

125 °C

0.4

0.2

0.1

1

10

25

I C - COLLECTOR CURRENT (mA)

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