BF506 データシートの表示（PDF） - New Jersey Semiconductor

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BF506

SILICON PLANAR PNP

New Jersey Semiconductor 

BF506

THERMAL DATA

Thermal resistance junction-ambient

max

420 °C/W

ELECTRICAL CHARACTERISTICS (Tamb= 25°C unless otherwise specified)

Parameter

Test conditions

Win. Typ. Max Unit

ICBO

Collector cutoff

current

(IE=0)

VCB= -20V

-200 nA

V(BR)CEO Collector-emitter

breakdown voltage

(IB=0)

lc = -5 mA

-35

V

VJBRJEBO Emitter-base

breakdown voltage

(lc=0)

IE --10 //A

-4

V

hF£

DC current gain

lc = -3 mA VCE= -10V

40

-

fr

Transition frequency lc =-1 mA VCE=-10V

f = 100 MHz

400

MHz

CCBO

Collector-base

capacitance

IE=0

VCB=-10V

f = 1 MHz

0.8

Crb

Reverse capacitance l c = 0

VCB=-10V

f = 1 MHz

0.13

NF*/** Noise figure

lc = -1 mA Vcc= -6V

Rg = 50 n

f = 200 MHz

2.5

Gpb*

Power gain

l c = - 3 m A Vcc= -10.8V

RL = 1kn

f = 200 MHz

14 17

* See TEST CIRCUIT

** Input adapting for optimum source admittance

pF

pF

4 dB

dB

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