DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IXGH45N120 データシートの表示(PDF) - IXYS CORPORATION

部品番号
コンポーネント説明
メーカー
IXGH45N120
IXYS
IXYS CORPORATION IXYS
IXGH45N120 Datasheet PDF : 2 Pages
1 2
Symbol
gfs
IC(ON)
Cies
Coes
Cres
Qg
Q
ge
Qgc
td(on)
tri
t
d(off)
tfi
E
off
td(on)
t
ri
Eon
t
d(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VGE = 10V, VCE = 10V
VCE = 25 V, VGE = 0 V, f = 1 MHz
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE
CES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
V
CE
=
0.8
V,
CES
R
G
=
R
off
=
5
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 5
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher T or increased R
J
G
33 44
S
220
A
4700
pF
255
pF
89
pF
170
nC
28
nC
57
nC
55
ns
28
ns
370 800 ns
390 700 ns
14 25 mJ
64
ns
32
ns
3.0
mJ
660
ns
740
ns
25
mJ
0.42 K/W
(TO-247)
0.25
K/W
IXGH 45N120
IXGT 45N120
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min Recommended Footprint
Dim. Millimeter
Min. Max.
A
4.9 5.1
A1
2.7 2.9
A2
.02 .25
b 1.15 1.45
b2
1.9 2.1
C
.4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e
5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2 1.00 1.15 .039 .045
L3
0.25 BSC
.010 BSC
L4 3.80 4.10 .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]