TGA1081-EPU(2001) データシートの表示（PDF） - TriQuint Semiconductor
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TGA1081-EPU Datasheet PDF : 4 Pages
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Advance Product Information
TGA1081-EPU
MAXIMUM RATINGS
Symbol
V+
I+
I-
PD
PIN
TCH
TM
TSTG
Parameter 4/
Positive Supply Voltage
Positive Supply Current
Negative Gate Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
8V
420 mA
17.6 mA
3.36 W
20 dBm
150 °C
320 °C
-65 °C to 150 °C
Notes
3/
1/, 2/
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to
failure (MTTF). For maximum life it is recommended that junction
temperatures be maintained at the lowest possible levels.
3/ Total current for the entire MMIC
4/ These values represent maximum operable values for the device
DC PROBE TESTS
(TA = 25 °C ± 5°C)
Symbol
Idss
VP
BVGS
BVGD
Parameter
Saturated Drain Current
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum
30
-1.5
-30
-30
Maximum
141
-0.5
-8
-8
Value
mA
V
V
V
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Vd = 5 V
Symbol Parameter
Test Condition
Gain
IRL
ORL
PWR
Small Signal
Gain
Input Return
Loss
Output Return
Loss
Output Power
@ P1dB
F = 25 GHz
F = 26 GHz
F = 27 GHz
F = 27.5 – 28.5 GHz
F = 29 GHz
F = 25 – 29 GHz
F = 25 – 29 GHz
F = 25 GHz
F = 26 GHz
F = 27 – 29 GHz
Limit
Min Typ Max
20 21 ---
22 24 ---
23 25 ---
24 24 ---
23 24 ---
--- -5 ---
--- -5 ---
18 21 ---
21 22 ---
21.5 23 ---
Units
dB
dB
dB
dBm
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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