Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1016
DESCRIPTION
·With TO-220Fa package
·High breakdown voltage
·Low collector saturation voltage
·Complement to type 2SD1407
APPLICATIONS
·Power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
-100
-100
-5
-5
-0.5
30
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃