2SD1213 データシートの表示（PDF） - Inchange Semiconductor
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2SD1213 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=0.4A
ICBO
Collector cut-off current
VCB=40V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=10A ; VCE=2V
fT
Transition frequency
IC=1A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A;IB1=-IB2=-0.5A
VCC=10V ;RL=1Ω
hFE-1 Classifications
Q
R
S
70-140 100-200 140-280
Product Specification
2SD1213
MIN TYP. MAX UNIT
30
V
60
V
6
V
0.4
V
0.1
mA
0.1
mA
70
280
30
120
MHz
0.3
μs
0.6
μs
0.02
μs
2
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