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LC72140 データシートの表示(PDF) - SANYO -> Panasonic

部品番号
コンポーネント説明
メーカー
LC72140
SANYO
SANYO -> Panasonic SANYO
LC72140 Datasheet PDF : 15 Pages
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LC72140, 72140M
Allowable Operating Ranges at Ta = –40 to +85˚C, VSS=0V
Parameter
Symbol
Conditions
Supply voltage
CE, CL, DI and I/O1 to I/O3 high-level input
voltage
I/O4, I/O5, HCTR/I6 and LCTR/I7 high-level
input voltage
CL, CE, DI, I/O1 to I/O5, HCTR/I6 and LCTR/I7
low-level input voltage
LCTR/I7 high-level input voltage
LCTR/I7 low-level input voltage
DO output voltage
I/O1 to I/O3 and AOUT output voltage
XIN input frequency
FMIN input frequency
AMIN input frequency
HCTR/I6 input frequency
LCTR/I7 input frequency
Crystal oscillator frequency
XIN rms input amplitude
FMIN rms input amplitude
AMIN rms input amplitude
HCTR/I6 rms input amplitude
HCTR/I7 rms input amplitude
DI to CL data setup time
DI to CL data hold time
CL low-level clock pulsewidth
CL high-level clock pulsewidth
CL to CE chip enable wait time
CE to CL chip enable setup time
CL to CE chip enable hold time
Chip enable to data latch time
CL to DO data output time
CE to DO data output time
VDD1
VDD2
VIH1
VIH2
VIL1
VIH3
VIL2
VOUT1
VOUT2
fIN1
fIN2
fIN3
fIN4
fIN5
fXTAL
VIN1
VIN2
VIN3
VIN4
VIN5
tSU
tHD
tCL
tCH
tEL
tES
tEH
tLC
tDC
tDH
VDD
VDD : serial data sustain voltage
Pulse wave, period measurement
Pulse wave, period measurement
Sine wave, capacitive coupling
Sine wave, capacitive coupling
Sine wave, capacitive coupling
Sine wave, capacitive coupling
Sine wave, capacitive coupling
Period measurement, pulse wave, DC coupling
Crystal impedance 120
50f<130MHz. See Programmable Divider
section.
10f<50 and 130f160MHz. See
Programmable Divider section.
2f<25MHz. See Programmable Divider
section.
25f40MHz. See Programmable Divider
section.
0.5f<2.5MHz. See Programmable Divider
section.
2.5f10MHz. See Programmable Divider
section.
Depends on pull-up resistor
min
4.5
2.0
Ratings
typ
2.2
2.2
0
2.2
0
0
0
1.0
10
0.5
0.4
10
0.001
4.0
0.2
0.07
0.10
0.04
0.07
0.04
0.07
0.04
0.04
0.45
0.45
0.45
0.45
0.45
0.45
0.45
Unit
max
5.5 V
V
6.5 V
VDD V
0.8 V
VDD
0.8
6.5
13
8.0
160
40.0
25
500
20.0
8.0
1.5
V
V
V
V
MHz
MHz
MHz
MHz
kHz
kHz
MHz
V
1.5 V
1.5 V
1.5 V
1.5 V
1.5 V
1.5 V
1.5 V
1.5 V
µs
µs
µs
µs
µs
µs
µs
0.45 µs
0.2 µs
Electrical Characteristics at Ta = –40 to +85˚C, VSS=0V
Parameter
Symbol
Conditions
XIN internal resistance
FMIN internal resistance
AMIN internal resistance
HCTR/I6 internal resistance
LCTR/I7 internal resistance
AIN sub-charge pump internal resistance
CE, CL, DI and LCTR/I7 hysteresis width
PD0, PD1, I/O4, I/O5, O6 and O7 high-level
output voltage
AIN high-level output voltage
PD0, PD1, I/O4, I/O5, O6 and O7 low-level
output voltage
I/O1 to I/O3 and DO low-level output voltage
AOUT low-level output voltage
AIN low-level output voltage
Rf1
Rf2
Rf3
Rf4
Rf5
R1S
VH
VOH1
VOH2
VOL1
VOL2
VOL3
VOL4
IO=1mA
IO=1mA
IO=1mA
IO=5mA
IO=1mA, VAIN=1.3V
IO=1mA
Ratings
min
typ
1.0
500
500
500
500
500
0.1VDD
VDD–1.0
VDD–1.5 VDD–0.7
Unit
max
M
k
k
k
k
V
V
V
1.0 V
1.0 V
0.5 V
0.7
1.5 V
Continued on next page.
No.4464–5/15

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