2SA1179 データシートの表示（PDF） - Galaxy Semi-Conductor

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2SA1179

Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

Production specification

Silicon Epitaxial Planar Transistor

2SA1179

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0

-55

V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO IE=-10μA,IC=0

-5

V

Collector cut-off current

Emitter cut-off current

ICBO

VCB=-35V,IE=0

IEBO

VEB=-4V,IC=0

-0.1 μA

-0.1 μA

DC current gain

hFE

VCE=-6V,IC=-1mA

200

400

Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA

-0.5 V

Base-emitter saturation voltage

VBE(sat)

IC=-50mA, IB=-5mA

-1.0 V

Transition frequency

fT

VCE=-6V, IC=-10mA

180

MHz

Collector output capacitance

Cob

VCB=-6V,IE=0,f=1MHz

4

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

C093

Rev.A

www.gmesemi.com

2

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