2SA1160 データシートの表示（PDF） - Transys Electronics Limited

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2SA1160

TO-92MOD Plastic-Encapsulated Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-92MOD Plastic-Encapsulated Transistors

2SA1160 TRANSISTOR (PNP)

FEATURE

Power dissipation

PCM : 0.9 W (Tamb=25℃)

Collector current

ICM: -2A

Collector-base voltage

V(BR)CBO: -20 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

Collector-base breakdown voltage

V(BR)CBO

Ic= -1mA , IE=0

-20

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA , IB=0

-10

Emitter-base breakdown voltage

V(BR)EBO

IE= -1mA, IC=0

-6

Collector cut-off current

ICBO

VCB= -20 V, IE=0

Emitter cut-off current

IEBO

VEB= -6 V, IC=0

DC current gain

hFE(1)

hFE(2)

VCE=-1V, IC= -0.5A

140

VCE=-1V, IC= -4A

60

Collector-emitter saturation voltage

VCE(sat)

IC= -2A, IB=-50mA

-0.2

Transition frequency

fT

VCE=-1V, IC= -0.5A

140

Output capacitance

Cob

VCE=-10V, IE=0,f=1 MHz

50

MAX

-0.1

-0.1

600

UNIT

V

V

V

µA

µA

-0.5

V

MHz

pF

CLASSIFICATION OF hFE

Rank

Range

A

140-280

B

200-400

C

300-600

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