2SA900 データシートの表示（PDF） - New Jersey Semiconductor
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2SA900 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA900
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-18V(Min)
• Good Linearity of I>E
• Low Collector Saturation Voltage
• Complement to Type 2SC1568
APPLICATIONS
• Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-20
V
VCEO
Collector-Emitter Voltage
-18
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-1
A
ICP
Collector Current-Pulse
-2
A
PC
Collector Power Dissipation
Tj
Junction Temperature
Tstg
Storage Temperature Range
1.2
W
150
•c
-55-150
•c
PIN 1.BMITTER
2.COLLECTOR
3. BASE
TO-126 package
r*-B--
~f ri '&
f
Q
'T
iT ,
rH -
V
D— ~\ r
— *"
t—
:r ~*1(
t•
A
1
;
k~j
K ~*
*-R
T
q 3 1 1 ••""»"' V
• * * •M^^BH
23
mm
DIM WIN MAX
A 10.70 10.95
B 7.70 7.90
C 2.60 2.30
D 0.66 0,36
F 3.10 3.30
G 4.4& 4.68
H 2.00 2.20
J 1.35 1.55
K 15.30 16,30
0 3.JO 3.90
R 0.40 0.60
V 1.17 1.37
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of soil
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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