2SA900 データシートの表示（PDF） - New Jersey Semiconductor

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2SA900

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc=-1mA;lB=0

V(BR)CBO Collector-Base Breakdown Voltage

lc=-10u A; IE=0

V(BR)EBO Emitter-Base Breakdown Voltage

lE=-10u A;lc=0

VcE(sat) Collector-Emitter Saturation Voltage lc= -1A;IB= -50mA

VBE(sat) Base-Emitter Saturation Voltage

lc= -0.5A; IB= -50mA

ICBO

Collector Cutoff Current

VCB= -20V; IE= 0

ICEO

Collector Cutoff Current

VCE=-18V;IB=0

hpE-1 DC Current Gain

lc= -0.5A; VCE= -2V

hFE-2

DC Current Gain

fr

Current-Gain—Bandwidth Product

lc=-1.5A;VCE=-2V

lc= -50mA; VCE= -6V

COB

Output Capacitance

IE=0;VCB=-6V, f,est=1MHz

• hpE-1 Classifications

Q

R

S

T

U

90-155 130-210 180-280 250-360 330-470

2SA900

MIN TYP. MAX UNIT

-18

V

-20

V

-5

V

-0.5 V

-1.2 V

-1

MA

-10 u A

90

470

50

200

MHz

40

PF

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