2SA744 データシートの表示（PDF） - New Jersey Semiconductor
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2SA744 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc=-50mA;lB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -3A;IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; lc= 0
hFE
DC Current Gain
lc= -3A ; VCE= -4V
fi
Current-Gain—Bandwidth Product
IE=0.5A;VCE=-12V
2SA744
MIN TYP. MAX UNIT
-80
V
-1.5
V
-1.0 mA
-1.0 mA
30
15
MHz
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