2SA733 データシートの表示（PDF） - Galaxy Semi-Conductor
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2SA733 Datasheet PDF : 4 Pages
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Production specification
Silicon Epitaxial Planar Transistor
2SA733
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0
-60
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO IE=-50μA,IC=0
-5
V
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Base-emitter on voltage
VBE
Transition frequency
fT
Collector output capacitance
Cob
VCB=-60V,IE=0
-0.1 μA
VEB=-5V,IC=0
-0.1 μA
VCE=-6V,IC=-1mA
90 200 600
IC=-100mA, IB=-10mA
-0.18 -0.3 V
VCE=-6V, IC= -1.0mA
-0.58 -0.62 -0.68 V
VCE=-6V, IC= -10mA
180
MHz
VCB=-10V, IE= 0 f=1MHz
4.5
pF
CLASSIFICATION OF hFE(1)
Rank
R
Range
90-180
Q
135-270
P
200-400
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
E
300-600
C009
Rev.A
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