A671 データシートの表示（PDF） - Inchange Semiconductor
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A671 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA671
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(SUS)= -1.0V(Max)@ IC= -2.0A
·DC Current Gain
: hFE= 35-320@ IC= -0.5A
·Complement to Type 2SC1061
APPLICATIONS
·Designed for use in low frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-50
V
VCEO Collector-Emitter Voltage
-50
V
VEBO Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-6
A
IBB
Base Current-Continuous
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-0.5
A
25
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
5.0
UNIT
℃/W
isc Website：www.iscsemi.cn
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