2SA562 データシートの表示（PDF） - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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2SA562

TRANSISTOR (PNP)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SA562

2SA562 TRANSISTOR (PNP)

D FEATURE

Power dissipation

T PCM : 0.5 W (Tamb=25℃)

.,L Collector current

ICM : -0.5 A

Collector-base voltage

O V (BR) CBO: -35 V

Operating and storage junction temperature range

C Tstg: -55℃ to +150℃

IC TJ : 150℃

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

123

N ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

O Parameter

R Collector-base breakdown voltage

Collector-emitter breakdown voltage

T Emitter-base breakdown voltage

C Collector cut-off current

E Emitter cut-off current

L DC current gain

E Collector-emitter saturation voltage

Base-emitter voltage

WEJ Transition frequency

Symbol

Test conditions

MIN

V(BR)CBO

Ic= -100µA , IE=0

-35

V(BR)CEO

IC= -1mA , IB=0

-30

V(BR)EBO

IE= -100µA, IC=0

-5

ICBO

VCB=-35V , IE=0

IEBO

VEB= -5V , IC=0

hFE

VCE=-1 V, IC=-100mA

70

VCE(sat)

IC= -100mA, IB= -10 mA

VBE(on)

fT

VCE=- 1V, IC=-100 mA

VCE= -6 V, IC= -20mA

200

F=30MHz

TYP

MAX

-0.1

-0.1

240

-0.25

-1

UNIT

V

V

V

µA

µA

V

V

MHz

CLASSIFICATION OF hFE

Rank

O

Y

Range

hFE(1)

70-140

120-240

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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