7MBR75GE060 データシートの表示（PDF） - Collmer Semiconductor
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7MBR75GE060 Datasheet PDF : 9 Pages
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IGBT Module
7MBR75GE060
1000
Switching time vs. RG
Vcc=300V, Ic=50A, VGE=±15V, Tj=25°C
100
10
10
1
100
Gate resistance : RG [ohm]
Transient thermal resistance
0.1
0.001
0.01
0.1
Pulse width PW [sec.]
Capacitance vs. Collector-Emitter voltage
Tj=25°C
10
Dynamic input characteristics
Tj=25°C
500
25
400
20
300
15
200
10
100
5
0
0
0
50
100
150
200
250
300
Gate charge : Qg [nC]
Reversed biased safe operating area
+VGE=15V, -VGE =< 15V, Tj <= 125°C, RG => 51 ohm
500
400
300
200
100
0
1
0
100
200
300
400
500
600
Collector-Emitter voltage : VCE [V]
1
0.1
0
5
10
15
20
25
30
35
Collector-Emitter voltage : VCE [V]
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