2SA1081 データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SA1081

TO-92 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2SA1081 TRANSISTOR (PNP)

FEATURES

z Low Frequency Amplifier

TO – 92

1. EMITTER

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-90

-90

-5

-0.1

400

312

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Collector output capacitance

Transition frequency

Symbol

Test conditions

Min Typ Max Unit

V(BR)CBO IC=- 0.01mA,IE=0

-90

V

V(BR)CEO IC=-1mA,IB=0

-90

V

V(BR)EBO IE=-0.01mA,IC=0

-5

V

ICBO

VCB=-50V,IE=0

-0.1

μA

IEBO

VEB=-2V,IC=0

-0.1

μA

hFE

VCE=-12V, IC=-2mA

250

800

VCE(sat) IC=-10mA,IB=-1mA

-0.2

V

VBE

VCE=-12V, IC=-2mA

-0.6

V

Cob

VCB=-10V,IE=0, f=1MHz

3.5

pF

fT

VCE=-12V,IC=-2mA

90

MHz

CLASSIFICATION OF hFE

RANK

RANGE

D

250-500

E

400-800

www.cj-elec.com

1

C,Dec,2015

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