2SA1037 データシートの表示（PDF） - Galaxy Semi-Conductor

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2SA1037

Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

Production specification

Silicon Epitaxial Planar Transistor

2SA1037

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0

-60

V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO IE=-50μA,IC=0

-6

V

Collector cut-off current

ICBO

Emitter cut-off current

IEBO

DC current gain

hFE

Collector-emitter saturation voltage VCE(sat)

Transition frequency

fT

Collector output capacitance

Cob

VCB=-60V,IE=0

VEB=-6V,IC=0

VCE=-6V,IC=-1mA

120

IC=-50mA, IB=-5mA

VCE=-12V, IC=-2mA

f=30MHz

VCB=-12V,IE=0,f=1MHz

-0.1 μA

-0.1 μA

560

-0.5 V

140

MHz

4.0 5.0

pF

CLASSIFICATION OF hFE(1)

Rank

Q

Range

120-270

Marking

FQ

R

180-390

FR

S

270-560

FS

C013

Rev.A

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