2SA1250 データシートの表示（PDF） - New Jersey Semiconductor
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2SA1250 Datasheet PDF : 2 Pages
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J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2SA1250
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min)
• Low Collector Saturatioin Voltage-
.)= -1.0V(Max.)@ lc= -5A
APPLICATIONS
• Designed for general-purpose power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VOEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-8
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25"C
Tj
Junction Temperature
-2
A
30
W
175
"C
Tstg
Storage Temperature Range
-65-175
"C
.3
I
_lx^
^V.
'
2
PIN 1.BASE
2. EMITTER
3. COLLECTOR (CASE)
TO-66 package
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fI
MM
A
B
.;
t>
E
3
H
K
L
N
Q
t
y}
nun
MM MAX
31.40 31.80
17.30 17.70
6.70
7.10
0.70
0.90
1.40
1.60
5.08
2.S4
9.80
14.70
12.40
3.60
24.30
10.20
14.90
12.60
3.SO
24.50
3.50
3.70^
NJ Semi-Coiuluctors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
lo press. Houever. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. "
NJ Semi-Conductors encourages customers to verify that datasheets are current before placinu orders.
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