2SA1227 データシートの表示（PDF） - New Jersey Semiconductor
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2SA1227 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VoE(sat) Collector-Emitter Saturation Voltage lc= -5.0A; IB= -0.5A
VeE(sat) Base-Emitter Saturation Voltage
lc= -5.0A; le= -0.5A
ICBO
Collector Cutoff Current
VCB= -140V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; lc= 0
hpE-1
DC Current Gain
lc= -2A; VCE= -5V
hpE-2
DC Current Gain
lc= -5A; VCE= -5V
COB
Output Capacitance
|E=0;VCB=-10V;f= 1.0MHz
ft
Current-Gain—Bandwidth Product lc= -1A; VCE= -5V
hpE-1 Classifications
R
Q
P
60-120 100-200 160-320
2SA1227
MIN TYP. MAX UNIT
-1.5
V
-2.0 V
-50 M A
-50 |J A
60
320
40
280
PF
60
MHz
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