2SA1890G データシートの表示（PDF） - Panasonic Corporation
部品番号
コンポーネント説明
メーカー
2SA1890G Datasheet PDF : 4 Pages
| |||
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1890G
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SC5026G
/ ■ Features
• Low collector-emitter saturation voltage VCE(sat)
e . • High collector-emitter voltage (Base open) VCEO
ge • Mini power type package, allowing downsizing of the equipment
c ta and automatic insertion through the tape packing and the magazine
n d le s packing.
a e lifecyc ■ Absolute Maximum Ratings Ta = 25°C
t Parameter
Symbol Rating
Unit
uc Collector-base voltage (Emitter open) VCBO
−80
V
n u rod Collector-emitter voltage (Base open) VCEO
−80
V
te tin r P Emitter-base voltage (Collector open) VEBO
−5
V
fou . Collector current
IC
−1
A
ing type tion Peak collector current
ICP
−1.5
A
w a Collector power dissipation *
PC
1
W
in n follo ance pe ped form / Junction temperature
Tj
150
°C
es ten e ty d ty t in /en Storage temperature
Tstg −55 to +150 °C
a o lud ain nc ue pe tes .jp Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
inc m na tin ty la .co board thickness of 1.7 mm for the collector portion
■ Package
• Code
MiniP3-F2
• Pin Name
1: Base
2: Collector
3: Emitter
■ Marking Symbol: 1Z
c ed ned inte con ued out onic ■ Electrical Characteristics Ta = 25°C ± 3°C
M is tinu pla ma dis ntin L ab nas Parameter
Symbol
Conditions
Min Typ Max
iscon laned isco UR .pa Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
−80
d g on Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0
−80
/D p in ic Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
D nce llow em Collector-base cutoff current (Emitter open) ICBO VCB = −40 V, IE = 0
− 0.1
na it fo w.s Forward current transfer ratio
hFE1 *2 VCE = −2 V, IC = −100 mA
120
340
te is w hFE2 *1 VCE = −2 V, IC = −500 mA
60
ain e v ://w Collector-emitter saturation voltage
VCE(sat) IC = −500 mA, IB = −50 mA
− 0.2 − 0.3
M as ttp Base-emitter saturation voltage *1
VBE(sat) IC = −500 mA, IB = −50 mA
− 0.85 −1.2
Ple h Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
120
Unit
V
V
V
µA
V
V
MHz
Collector output capacitance
Cob VCB = −10 V, IE = 0, f = 1 MHz
15 30
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
120 to 240 170 to 340
Publication date: September 2007
SJD00327AED
1
Share Link: 