2SC1766 データシートの表示（PDF） - Galaxy Semi-Conductor
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2SC1766 Datasheet PDF : 3 Pages
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Production specification
NPN Epitaxial Transistor
2SC1766
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector cut-off current
Emitter cut-off current
ICBO
IEBO
VCB=50V,IE=0
VEB=5V,IC=0
0.1 μA
0.1 μA
DC current gain
VCE=2V,IC=500mA
82
390
hFE
VCE=2V,IC=2A
20
Collector-emitter saturation voltage VCE(sat) IC=1A, IB=50mA
0.5 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=1A, IB=50mA
VCE=2V,Ic=0.5A
f=100MHz
1.2
120
mV
MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
40
pF
CLASSIFICATION OF hFE
Rank
Range
MARKING
P
82-180
P1766
Q
120-270
Q1766
Y
180-390
Y1766
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
E049
Rev.A
www.gmicroelec.com
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